吕伟锋

发布者:郭红梅发布时间:2019-06-26浏览次数:4342


吕伟锋,博士,副教授,浙江大学电路与系统专业博士,美国德州大学奥斯汀分校访问学者,中国电子学会会员。主要从事纳米CMOS电路及CAD、新型集成纳米器件,超低功耗器件与电路,面向DFM的统计设计方法等方面的研究。作为负责人主持国家自然科学基金面上项目2项、浙江省自然科学基金一般项目1项,浙江省教育厅项目1项。作为科研骨干参与国家自然科学基金和浙江省自然科学基金多项,具有较丰富的教学科研经历和学术背景。近年来在国内外期刊和国际会议上发表论文约40篇,其中被SCI收录近20篇,EI收录10余篇,获得浙江省高等学校科研成果奖1。主编教材1部,合著出版教材5部。被邀请担任国际上10多个SCIEI收录期刊审稿人

近三年代表性论文:

[1] Tianyu Yu , Weifeng Lü, Zhifeng, Zhao, Peng Si, Kai Zhang. Negative Drain-Induced Barrier Lowering and Negative Differential Resistance Effects in Negative-Capacitance Transistors, Microelectronics Journal, 2021, 108(2):104981.

[2] Tianyu Yu, Weifeng Lü, Zhifeng, Zhao, Peng Si, Kai Zhang. Effect of Different Capacitance Matching on Negative Capacitance FDSOI Transistors, Microelectronics Journal, 2020, 98(4):104730.

[3] Liang Dai, Wei-Feng Lü, Mi Lin. Effects of Work-function Variation on Performance of Junctionless and Inversion-Mode Dual-Metal Gate Nanowire Transistors, Journal of semiconductor technology and science, 2020, 20(4): 349-356.

[4] Liang Dai, Wei-Feng Lü. Degeneration of Line-edge Roughness-induced Variability for Dual-metal Gate Fin Field-effect Transistors, Journal of Nanoelectronics and Optoelectronics, 2020, 15(1):142-146.

[5] Peng Si, Kai Zhang, Tianyu Yu, Zhifeng, Zhao,Weifeng Lü. Analog / RF Performance Analysis of Nanometer Negative Capacitance FDSOI Transistors, InfMIDEM, 2020, 50(1):47-53.

[6] Wei-Feng Lü, Liang Dai, Zhifeng Zhao, Mi Lin. Performance Improvements of Random Dopant Fluctuation-Induced Variability in Negative Capacitance MOSFETS, Fluctuation and Noise Letters, 2020, 19(1):2050002.

[7] Kai Zhang, Weifeng Lü, Peng Si, Zhifeng, Zhao, Tianyu Yu. Performance improvement of timing and power variations due to random dopant fluctuation in negative-capacitance CMOS inverters, IET Circuits, Devices & Systems, 2020,14(6): 908-914.

[8] Zhifeng Zhao, Tianyu Yu, Peng Si, Kai Zhang, Weifeng Lü.Superior Performance of a Negative-capacitance Double-gate Junctionless Field-effect Transistor with Additional Source-drain Doping, InfMIDEM, 2020,50(3):169-177.

[9] Weifeng Lü, and Liang Dai. Impact of work-function variation on analog figures-of-merits for high-k/metal-gate junctionlessFinFET and gate-all-around nanowire MOSFET, Microelectronics Journal, 2019, 84(2):54-58.

[10] Liang Dai, and Weifeng . Random Dopant Fluctuation-Induced Variability in n-Type Junctionless Dual-Metal Gate FinFETs, Electronics, 2019, 8(3): 282.

[11]Wei-Feng Lü, Liang Dai, Guang-Yi Wang, and Mi Lin. Impact of Correlation on Gate Capacitance Variability Due to Random Dopant Fluctuation and Work-Function Variation in Nanometer Metal-Oxide-Semiconductor-Field-Effect-Transistors, J. Nanoelectron. Optoelectron. 2019, 14(7) 1037–1041.  

联系方式:lvwf@hdu.edu.cn