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程知群教授

 
男,1964年生,工学博士,教授,博士生导师。1986年和1995年分别获得合肥工业大学微电子学学士和硕士学位,2000年获中国科学院上海微系统与信息技术研究所博士学位,2004年至20068月在香港科技大学作博士后研究,2009年至2010年在加拿大Dalhousie大学和Carleton大学访问教授,20146月至12月在英国Queen’s University, Belfast访问学者。
现为杭州电子科技大学电子信息学院院长IEEE ED会员,IEEE MTT和半导体学报等特约审稿人,中国电子学会会员,中国电子学会半导体与集成电路分会委员会委员,中国电子学会微波学会微波集成电路与移动通信专业委员会委员、国家自然科学基金和多个省市自然科学基金网评专家,浙江省中青年学科带头人,浙江省151人才第2层次。发表学术论文130多篇,其中被SCIEI收录70多篇;获中国国家发明和实用新型专利27项,获安徽省科技成果奖2项,获江西省自然科学二等奖1项。
主要研究领域为:第4代移动通信用“高效率功率放大器研究”,超宽带功率放大器研究,新型半导体器件结构设计和建模技术研究,射频/微波集成电路研究,毫米波/太赫兹集成电路设计,应用于物联网技术无线通信模块。
发表代表性(SCIEI收录)论文
1)Zhiqun Cheng, Dandan Zhu, Guoguo Yan, Guohua Liu, Steven Gao, A 3-7 GHz HEMT POWER AMPLIFIER, Microwave and optical technology letters, Vol. 58, No. 4, April 2016, pp.901-904.
2)ChengZhiqun ,Yan Guoguo, Ni Wayne Zhu Dandan Ni Hannah, Li Jin, Chen Shuai, and Liu Guohua, SP6T RF switch based on IBM SOI CMOS technology, Chinese Journal of Semiconductors, Vol. 37, No. 3,2016,1-4. ISSN:0253-4177
3)Zhiqun Cheng, Dandan Zhu, Guoguo Yan, Shuai Chen, Kai Wang, Kaikai Fan, Guohua Liu, Hui Wang, and Steven Gao, Design and fabrication of ultra-wideband power amplifier based on GaN HEMT, IEICE Electronnics Express, 2015.10,Vol.12, No. 20, 1-8.ISSN:1349-2543
4)Cheng ZhiqunJia Minshi, Luan Ya, Lian Xinxiang, Study of Solid-state Wide-Band GaN HEMT Power Amplifier with a Novel Negative Feedback Structure, Journal of Semiconductor, 2014,35(12):125005-1-4
5)Tao ZhouZhiqun Cheng, Hongfang Zhang,Martine Le Berre, Liviu Militaru, and Francis Calmon, MINIATURIZED TUNABLE TERAHERTZ ANTENNA BASED ON GRAPHENE, Microwave and optical technology letters, Vol. 56, No. 8, 2014,pp.1792-1794
6)Zhiqun Cheng, Xi Wang, Qinna Wang, A NEW NOVEL MODELING OF MILLIMETERWAVE Al0.27Ga0.73N/AlN/GaN HEMT BASEDON ARTIFICIAL NEURAL NETWORK, Microwave and optical technology letters, Vol. 55, No. 9, September 2013, 2124-2127.
7)Liwei Jin, Zhiqun Cheng, and QingnaWang, Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics, International Journal of Antennas and Propagation, Volume 2013,1-3
8)Zhi-qun Cheng, Sha Hu, Wei-jian Zhou, and Jun Liu, “Effect of composited-layer AlyGa1-yN on performances of AlGaN/GaN HEMT with unintentionally doping barrier AlXGa1-xN”, Microwave and Optical Technology Letters, Vol.53, No.6,June 2011. 1206-1209
9)ChengZhiqun, Hu Shu, Liu Jun, and Zhang Qi-Jun, “Novel model of AlGaN/GaN high electron mobility transistor based on artificial neural network”,Chin.Phys.B Vol.20,No.3(2011),1-6
10)程知群周肖鹏胡莎周伟坚张胜 “高线性度AlxGa1-xN/AlyGa1-yN/GaN高电子迁移率晶体管优化设计,物理学报,Vol.59,No.2,February,2010,1252-1257.
11)Cheng Zhi-Qun Li Jing Mao Xiang-Gen Tan Song Chen J.Kevin, “Plip-Chip Intergrated Oscillator with Reduced Phase Noise and Enhanced Output Power by Using DGS”, J.Infrared Millim.Waves, Vol.27, No.6, Dec.2008, 401-404.
12)Cheng Zhi-Qun, Cai Yong, Liu Jie, Zhou Yu-Gang, Kei May Lau, and Chen J.Kevin, “MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs”, Chinese Physics, Vol.16.No.11, November,2007, 3494-3497.
13)CHENG Zhi-Qun, CAI Yong, LIU Jie, ZHOU Yu-Gang, LIU Zhi-Mei, CHEN Jing, “Novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMT MMIC VCO with low phase noise”, J.Infrared Millim.Waves, Vol.26.No.4, August,2007, 241-245.
14)Zhiqun Cheng, Yong Cai, Jieliu, Yugang Zhou, Kei May Lau, and Kevin J.Chen, “A Low Phase-Noise X-Band MMIC VCO Using High-Linearity and Low-Noise Composite-Channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs”, IEEE Transactions on Microwave Theory and Techniques, Vol.55, No.1, January 2007, pp.23-29.
15)Zhiqun Cheng, Jie Liu, Yugang Zhou, Yong Cai, Kevin J.Chen, and Kei May Lau, “1.9GHz Low Noise Amplifier using High Linearity and Low-noise Composite-Channel HEMTs”, Microwave and Optical Technology Letters.vol.14, No.6, Jun. 2007,1360-1362.
联系方式:电子信箱:zhiqun@hdu.edu.cn
话:0571-86919081

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