董志华

发布者:管理员发布时间:2017-12-04浏览次数:4131


董志华,男,于20007月和20057月分别在山东工业大学(现为山东大学千佛山校区)和山东师范大学获得工学学士(微电子技术)和工学硕士学位(固体电子学与微电子学)。于20111月在北京大学获得理学博士学位(固体电子学与微电子学),现为IEEE Member。主要从事微纳器件及电路研究。2013年自中国科学院苏州纳米技术与纳米仿生研究所电子科学与技术专业博士后联合流动站出站。2017.1220191月,作为国家公派访问学者,赴美国马里兰大学访学,从事纳米材料及器件研究。在2012年实现了国内第一支增强型SiGaN大功率开关器件,2014年进入杭州电子科技大学,从事宽禁带半导体微波毫米波器件及电路、新型微纳米器件的研究。

Google scholar H因子12,在国内外刊物上发表项目论文50余篇、国际会议EI论文3篇,获得授权中国发明专利10余项,美国专利2项。作为项目负责人,完成国家自然科学基金青年科学基金项目1项。曾参与多项国家自然科学基金面上项目及浙江省自然科学基金重点项目等。

联系方式:dongzhihua@hdu.edu.cn

代表性论文

  1. Zhili Zhang, Weiyi Li, Kai Fu, Guohao   Yu, Xiaodong Zhang, Yanfei Zhao, Shichuang Sun, Liang Song, Xuguang Deng,   Zheng Xing, Lei Yang, Rongkun Ji, Chunhong Zeng, Yaming Fan, Zhihua Dong, Yong Cai, Baoshun Zhang   AlGaN/GaN MIS-HEMTs of Very-low Vth Hysteresis & Current Collapse with   in-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4   Gate Insulator, IEEE Electron Device   Letters,2017, 38(2),   pp.448~450

  2. Shiqi Li, Guofeng Ren,Md Nadim Ferdous Hoque, Zhihua Dong, Juliusz Warzywoda, Zhaoyang Fan*, Carbonized cellulose paper as an effective interlayer in lithium-sulfur batteries. Applied Surface Science, 2017, 396:637-643.

  3. Mengyuan, Hua, Cheng Liu, Shu   Yang,  Shenghou Liu, Kai Fu, Zhihua   Dong,  Yong Cai,  Baoshun Zhang, Kevin J. Chen,   Characterization of Leakage and Reliability of SiNx Gate Dielectric by   Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs,IEEE Transactions on Electron Devices, 62(2015), pp.  3215~3222

  4. Mengyuan, Hua, Cheng Liu, Shu Yang,  Shenghou Liu, Kai Fu, Zhihua Dong,  Yong Cai,    Baoshun Zhang, Kevin J. Chen, GaN-Based Metal-Insulator-Semiconductor   High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor   Deposition SiNx as Gate Dielectric, IEEE   Electron Device Letters, 36(2015),   pp.448~450

  5. Mengyuan, Hua, Cheng Liu, Shu   Yang,  Shenghou Liu,Yunyou Lu, Kai Fu, Zhihua   Dong,  Yong Cai,  Baoshun Zhang, Kevin J. Chen 650-V   GaN-Based MIS-HEMTs Using LPCVD-SiNx as Passivation and Gate Dielectric,IEEE International Symposium   on Power Semiconductor Devices & Ics (2015), pp. 241~ 244

  6. Zhihua   Dong,   Ronghui Hao, Zhili ZhangYong Cai,   Baoshun Zhang and Zhiqun Cheng ,IMPACT OF N- PLASMA TREATMENT ON   THE CURRENT COLLAPSE OF ALGAN/GAN HEMTS, IEEE 12thInternational Conference on   Solid-State and Integrated Circuit Technology (ICSICT) Proceedings,   Guilin , 2014, pp.1020~1022

  7. Zhihua Dong, Shuxin Tan, Yong Ca, Hongwei Chen, Shenghou Liu,   Jicheng Xu, Lu Xue, Guohao Yu, Yue Wang, Desheng Zhao, Keyu Hou, K.J. Chen,  Baoshun Zhang, 5.3A/400V normally-off   AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swingElectronics Letters 49 (2013),pp. 221-2

  8. Guohao Yu,  Yong Cai, Yue Wang, Zhihua Dong, Chunhong Zeng, Desheng Zhao, Hua Qin, Baoshun Zhang, A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance, IEEE Electron Device Letters, 34(2013), pp 747-749

  9. Guohao Yu,  Yue Wang, Yong Cai, Zhihua  Dong, Chunhong Zeng, Baoshun Zhang, Dynamic Characterizations of AlGaN/GaN HEMTs with Field-plates using a Double-gate Structure, IEEE Electron Device Letters 34(2013), pp.217-9

  10. Zhihua Dong, Jinyan Wang, C. P. Wen, Rumin Gong, ShenghouLiu, Min Yu, YilongHao,Fujun Xu, Bo Shen, Yangyuan Wang, High temperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructure, Microelectronics reliability,52 (2012), pp. 434-438

  11. Zhihua Dong , Jinyan Wang, C.P. Wen, Danian Gong , Ying Li, Min Yu , YilongHao , Fujun Xu ,Bo Shen , 10angyuan Wang, High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Tias gate insulator, Solid-State Electron, 54 (2010), pp. 1339–42

  12. Zhihua Dong, Jinyan Wang, Rumin Gong, Shenghou Liu, C. P. Wen, Min Yu, FujunXu,YilongHao, Bo Shen, Yangyuan Wang,Multiple Ti/Al stacks induced thermal stability enhancement inTi/Al/Ni/Au Ohmic contact on AlGaN/GaN heterostructure, IEEE10thInternational Conference on Solid-State and Integrated Circuit Technology (ICSICT) Proceedings, pp. 1359-1361,Shanghai , 2010

  13. Rumin Gong, Jinyan Wang, Zhihua Dong, Shenghou Liu, Min Yu, Cheng P. Wen, YilongHao, Bo Shen, Yong Cai, Baoshun Zhang, Jincheng Zhang, Analysis on the new mechanisms of low-resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs, Journal of Physics D: Applied Physics, 43(2010), pp.395102

  14. Rumin Gong, Jinyan Wang, Shenghou Liu, Zhihua Dong, Min Yu, Cheng P. Wen, Yong Cai, Baoshun Zhang, Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN High Electron Mobility Transistors (HEMTs), Applied Physics Letter,97(2010) 062115

  15. Zhihua Dong, Chengshan Xue, Huizhao Zhuang, Haiyong Gao, Deheng Tian, Yuxin Wu, Synthesis of GaN films on porous silicon substrates, Rare Metals, 25(2006), pp 96-98

  16. Zhihua Dong,  Chengshan Xue, Huizhao Zhuang, Shuyun Wang,  Haiyong Gao, Deheng Tian, Yuxin Wu, Jianting He, Yi’an Liu, Synthesis of three kinds of GaN nanowires through Ga2O3 films’ reaction with ammonia, Physica E: Low-Dimensional Systems and Nanostructures, 27(2005), pp 32-37

    Qinqin Wei, Chengshan Xue, Zhencui Sun,  Huizhao Zhuang, Wentian Cao,   Shuyun Wang, Zhihua Dong, Fabrication of large-scale α-Si3N4 nanotubes on Si(111) by hot-wall chemical-vapor-deposition with the assistance of Ga2O3, Applied Surface Science, 229(2004), pp 9-12




中国专利 

1. 董志华;蔡勇;于国浩;张宝顺, 2014,具有背面场板结构的增强型HEMT器件及其制备方法, CN201410007469.8

2. 董志华;蔡勇;于国浩;张宝顺, 2014,具有背面场板结构的MIS-HEMT器件及其制备方法, CN201410008434.6

3. 董志华;蔡勇;于国浩;张宝顺, 2014,具有背面场板结构的HEMT器件及其制备方法, CN201410008455.8

4. 董志华;蔡勇;于国浩;张宝顺, 2014,具有背面场板结构的增强型MIS-HEMT 器件及其制备方法, CN201410008777.21.

5. 蔡勇;于国浩;董志华;王越;张宝顺, 2011,Ⅲ族氮化物增强型MISHEMT 器件,CN201110367361.6

6. 蔡勇;于国浩;董志华;王越;张宝顺, 2011,Ⅲ族氮化物增强型HEMT器件, CN201110366992.6

7. 蔡勇;于国浩;董志华;王越;张宝顺,2011,Ⅲ族氮化物HEMT器件, CN201110367070.7

8. 董志华,王金延,郝一龙,文正,王阳元,氮化镓基器件的欧姆接触及其制备方法,  专利号:200810212053.4

 

 

美国专利

 

1. Novel III-V Heterojunction Field Effect Transistor, Zhihua Dong, Zhiqun Cheng, Guohua Liu, Huajie KeUS Patent. 申请号:15/75,5424 (已授权)

2. Group III nitride high electron mobility transistor (HEMT) device, Yong Cai, Guohao Yu, Zhihua Dong,Baoshun Zhang, US Patent. US9070756B2